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H V SC AV ER O M A I S IO P L L A N IA BL S N T E
TISP4070J1BJ THRU TISP4395J1BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R o
TISP4xxxJ1BJ Overvoltage Protector Series
Ground Return Element of Y Configuration -2x Current Capability of Y Upper Elements -Available in a Wide Range of Voltages -Enables Symmetrical and Asymmetrical Y Designs -SMB (DO-214AA) Package Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge
Device TISP4070J1 TISP4080J1 TISP4095J1 TISP4115J1 TISP4125J1 TISP4145J1 TISP4165J1 TISP4180J1 TISP4200J1 TISP4219J1 TISP4250J1 TISP4290J1 TISP4350J1 TISP4395J1 VDRM V 58 65 75 90 100 120 135 145 155 180 190 220 275 320 V(BO) V 70 80 95 115 125 145 165 180 200 219 250 290 350 395
2/10 8/20 10/160 10/700 10/560 GR-1089-CORE IEC 61000-4-5 TIA/EIA-IS-968 (FCC Part 68) ITU-T K.20/21/45 TIA/EIA-IS-968 (FCC Part 68) GR-1089-CORE
SMB Package (Top View)
MT1 1
2 MT2
MD4JAA
Device Symbol
MT2
MT1
SD4JAA
Rated for International Surge Wave Shapes
Wave Shape Standard IPPSM A 1000 800 400 350 250 200
............................................ UL Recognized Components
10/1000
Description
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example, the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the Applications Information section. These SMB package combinations are often more space efficient than single package Y protection multi-chip integrations. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a lowvoltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH , level the devices switches off and restores normal system operation.
How to Order
For Standard Termination Finish Order As
TISP4xxxJ1BJR
Device TISP4xxxJ1BJ
Package BJ (SMB/DO-214AA J-Bend)
Carrier R (Embossed Tape Reeled)
For Lead Free Termination Finish Order As
TISP4xxxJ1BJR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating '4070 '4080 '4095 '4115 '4125 '4145 Repetitive peak off-state voltage '4165 '4180 '4200 '4219 '4250 '4290 '4350 `4395 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 5/310 (ITU-T K.20/21, 10/700 volt age wave shape, single) 5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single) 10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 50 Hz, 1 cycle 60 Hz, 1 cycle Initial rate of rise of on-s tate current, Junction temperature Storage temperature range Linear current ramp, Maximum ramp value < 50 A di T/dt TJ Tstg ITSM 80 100 800 -40 to +150 -65 to +150 A/s C C A IPPSM 1000 800 400 370 350 350 250 200 A VDRM Symbol Value 58 65 75 90 100 120 135 145 155 180 190 220 275 320 V Unit
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions.
Recommended Operating Conditions
Component Series resistor for GR-1089-CORE first-level surge survival Series resistor for ITU-T recommendation K. 20/K.45/K.21 (Basic coordi nation with 400 V GDT) R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival Min 0 6.5 0 0 0 Typ Max Unit
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM Repetitive peak offstate current VD = VDRM Test Conditions TA = 25 C TA = 85 C 4070 '4080 '4095 '4115 '4125 '4145 V(BO) AC breakover voltage dv/dt = 250 V/ms, R SOURCE = 300 '4165 '4180 '4200 '4219 '4250 '4290 '4350 `4395 4070 '4080 '4095 '4115 '4125 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Ramp breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A '4145 '4165 '4180 '4200 '4219 '4250 '4290 '4350 `4395 4070 '4080 '4095 '4115 '4125 '4145 V(BO) Impulse breakover voltage 2/10 wave shape, I PP = 1000 A, RS = 2.5 , (see Note 3) '4165 '4180 '4200 '4219 '4250 '4290 '4350 `4395 96 101 112 130 140 161 183 199 221 242 276 320 386 434 V Min Typ Max 5 10 70 80 95 115 125 145 165 180 200 219 250 290 350 395 77 88 104 125 135 156 177 192 212 231 263 303 364 409 V V Unit A
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency noise.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued)
Parameter I(BO) IH dv/dt ID Breakover current Holding current Critical rate of rise of off-state voltage Off-state current dv/dt = 250 V/ms, Test Conditions R SOURCE = 300 20 5 TA = 85 C Vd = 1 V rms, VD = 0, `4070 thru `4115 `4125 thru `4219 `4250 thru `4395 f = 1 MHz, Vd = 1 V rms, VD = -1 V `4070 thru `4115 `4125 thru `4219 `4250 thru `4395 Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -2 V `4070 thru `4115 `4125 thru `4219 `4250 thru `4395 f = 1 MHz, Vd = 1 V rms, VD = -50 V `4070 thru `4115 `4125 thru `4219 `4250 thru `4395 f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 4) NOTE 4: To avoid possible voltage clipping, the `4125 is tested with VD = -98 V `4125 thru `4219 `4250 thru `4395 195 120 105 180 110 95 165 100 90 85 50 42 40 35 10 235 145 125 215 132 115 200 120 105 100 60 50 50 40 pF Min Typ Max 600 Unit mA mA kV/s A
IT = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85 VDRM VD = 50 V f = 1 MHz,
Thermal Characteristics
Parameter R JA Junction to free air thermal resistance Test Condit ions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 5) Min Typ Max 90 Unit C/W
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
+i IPPSM Quadrant I Switching Characteristic
ITSM V(BO) IH I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO) V(BO)
IH
ITSM Quadrant III Switching Characteristic IPPSM -i
PM4XAF
Figure 1. Voltage-Current Characteristic for Terminals 1-2 All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V
TC4JAG
1.15
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF
Normalized Breakover Voltage
10
1.10
|ID| - Off-State Current - A
1
1.05
0*1
1.00
0*01
0.95
0*001 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 150
0.90 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 150
Figure 2.
Figure 3.
ON-STATE CURRENT vs ON-STATE VOLTAGE
400 300 200 150
IT - On-State Current - A
TC4JAA
2.0
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD
TA = 25 C tW = 100 s
Normalized Holding Current
1.5
100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7
1.0 0.9 0.8 0.7 0.6 0.5 0.4
1
1.5 2 3 45 7 VT - On-State Voltage - V
10
15
-25
0 25 50 75 100 TJ - Junction Temperature - C
125
150
Figure 4.
Figure 5.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE
1 0.9 0.8
TC4JABB
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
90 C - Differential Off-State Capacitance - pF
TC4JAE
Capacitance Normalized to VD = 0
0.7 0.6 0.5 0.4
TJ = 25 C Vd = 1 Vrms
80
70
C = Coff(-2 V) - Coff(-50 V)
60
0.3
50
0.2 0.5
1
23 5 10 20 30 VD - Off-state Voltage - V
50
100150
40 50
60 70 80 90 100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
NORMALIZED CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE
2.5 Vd = 10 mV rms, 1 MHz
Normalized Capacitance Asymmetry - %
TC4JCC
2.0
1.5
1.0
Vd = 1 V rms, 1 MHz
0.5
0.0 0.5 0.7 1
2 3 4 5 7 10 20 VD -- Of f -State Voltage -- V
30 4050
Figure 8.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
40 ITSM(t) - Non-Repetitive Peak On-State Current - A 30 20 15 10 9 8 7 6 5 4 3 2 0*1 0.94
TI4JAA
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99
TI4JADC
VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN /ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C Derating Factor
0.98
0.97
0.96
'4070 THRU '4115
'4125 THRU '4219
0.95
1
10 100 t - Current Duration - s
1000
0.93 -40 -35 -30 -25 -20 -15 -10 -5
'4250 THRU '4395
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - C
Figure 9.
Figure 10.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Y Configuration Design
This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2 V(BO)1. For a terminal pair protection voltage of 400 V, Th1a and Th1b would have V (BO)1 = 400/2 = 200 V. Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V (BO)2. The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM, off-state voltages, see Figure 12. For RING to TIP this will be 2 VDRM1. The 200 V V(BO)1 protectors of the previous example have a VDRM of 155 V, giving a maximum non-clipping signal voltage of 310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + V DRM2 . Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b.
RING RING RING
TIP
2 V(BO)1 Th1a Th1b V(BO)1 V(BO)1 V(BO)1 + V(BO)2 V(BO)2 Th2
TIP
2 VDRM1 Th1a Th1b VDRM1 I VDRM1 VDRM1 + VDRM2 Th2
TIP UNPROTECTED SIDE
ITIP Th1a
IRING Th1b PROTECTED SIDE
AI4JAA
V(BO)1 + V (BO)2
VDRM1 + VDRM2 VDRM2
ITIP + I RING
Th2
AI4JAC
AI4JAB
Figure 11. Protection Voltage
GR-1089-CORE Designs
Figure 12. Off-State Voltage
Figure 13. Current Flow
The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable Th1a and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated for at least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations.
RING to TIP Voltages VDRM V
116 130 150 180 200 240 270 290 310 360
RING to GROUND, TIP to GROUND Voltages VDRM V
116 130 150 180 200 240 270 290 310 360
GR-1089-CORE Y Configuration Parts and Part Voltages Th1a, Th1b Part #
TISP4070H3BJ TISP4080H3BJ TISP4095H3BJ TISP4115H3BJ TISP4125H3BJ TISP4145H3BJ TISP4165H3BJ TISP4180H3BJ TISP4200H3BJ TISP4219H3BJ
V(BO)
V 140 160 190 230 250 290 330 360 400 438
V(BO)
V 140 160 190 230 250 290 330 360 400 438
Th2 Part #
TISP4070J1BJ TISP4080J1BJ TISP4095J1BJ TISP4115J1BJ TISP4125J1BJ TISP4145J1BJ TISP4165J1BJ TISP4180J1BJ TISP4200J1BJ TISP4219J1BJ
VDRM V
58 65 75 90 100 120 135 145 155 180
V(BO) V
70 80 95 115 125 145 165 180 200 219
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
GR-1089-CORE Designs (Continued)
RING to TIP Voltages VDRM V
380 440 550 640
RING F1b
RING to GROUND, TIP to GROUND Voltages VDRM V
380 440 550 640
GR-1089-CORE Y Configuration Parts and Part Voltages Th1a, Th1b Part #
TISP4250H3BJ TISP4290H3BJ TISP4350H3BJ TISP4395H3BJ
RING R1b
V(BO)
V 500 580 700 790
V(BO)
V 500 580 700 790
Th2 Part #
TISP4250J1BJ TISP4290J1BJ TISP4350J1BJ TISP4395J1BJ
VDRM V
190 220 275 320
V(BO) V
250 290 350 395
TIP
F1a Th1a TISP4xxxH3BJ Th1b TISP4xxxH3BJ
TIP
R1a Th1a + Th1b TISP4xxxT3BJ
Th2 TISP4xxxJ1BJ
AI4JAD
Th2 TISP4xxxJ1BJ
AI4JAE
Figure 14. GR-1089-CORE Design
ITU-T K.20, K.45 and K.21 Designs
Figure 15. Coordinated ITU-T K Recommendation Design
The main impulse voltage wave shape of these recommendations is 10/700. The current wave shape is loading dependent, but it is 5/310 into a short circuit. To coordinate with a 400 V primary protector a minimum series resistance of 6.5 is required ("The New ITU-T Telecommunication Equipment Resistibility Recommendations", Compliance Engineering Magazine, January-February 2002). The coordination resistance limits the peak non-truncated current to 400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated for at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices.
RING to TIP Voltages VDRM V
116 130 150 180 200 240 270 290 310 360 380 440
RING to GROUND, TIP to GROUND Voltages VDRM V
116 130 150 180 200 240 270 290 310 360 380 440
ITU-T Y Configuration Parts and Part Voltages R1a = R1b = 6.5 Th1a + Th1b Part #
TISP3070T3BJ TISP3080T3BJ TISP3095T3BJ TISP3115T3BJ TISP3125T3BJ TISP3145T3BJ TISP3165T3BJ TISP3180T3BJ TISP3200T3BJ TISP3219T3BJ TISP3250T3BJ TISP3290T3BJ
V(BO)
V 140 160 190 230 250 290 330 360 400 438 500 580
V(BO)
V 140 160 190 230 250 290 330 360 400 438 500 580
Th2 Part #
TISP4070J1BJ TISP4080J1BJ TISP4095J1BJ TISP4115J1BJ TISP4125J1BJ TISP4145J1BJ TISP4165J1BJ TISP4180J1BJ TISP4200J1BJ TISP4219J1BJ TISP4250J1BJ TISP4290J1BJ
VDRM V
58 65 75 90 100 120 135 145 155 180 190 220
V(BO) V
70 80 95 115 125 145 165 180 200 219 250 290
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
ITU-T K.20, K.45 and K.21 Designs (Continued)
RING to TIP Voltages VDRM V
550 640
RING to GROUND, TIP to GROUND Voltages VDRM V
550 640
ITU-T Y Configuration Parts and Part Voltages R1a = R1b = 6.5 Th1a + Th1b Part #
TISP3350T3BJ TISP3395T3BJ
V(BO)
V 700 790
V(BO)
V 700 790
Th2 Part #
TISP4350J1BJ TISP4395J1BJ
VDRM V
275 320
V(BO) V
350 395
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two 165 V V(BO) parts for Th1a and Th1b, the RING to TIP voltage is limited to 330 V. Using a higher voltage 350 V V(BO) part for Th2 limits the insulation stress to 515 V. Figure 17 and its following table is for a GR-1089-CORE compliant design.
RING to TIP Voltages VDRM V
270
RING to GROUND, TIP to GROUND Voltages VDRM V
410
T1
GR-1089-CORE Y Configuration Parts and Part Voltages Th1a, Th1b Part #
TISP4165H3BJ
V(BO)
V 330
V(BO)
V 515
Th2 V(BO) V
165
VDRM V
135
Part #
TISP4350J1BJ
VDRM V
275
V(BO) V
350
TIP
RING
F1b
C1 Voltage Limit
TIP C1
F1a Th1a TISP4165H3BJ Th1b TISP4165H3BJ
RING T1 or PW Insulation Breakdown
AI4JAH
Th2 TISP4350J1BJ
Figure 16. ADSL Modem Interface Voltage Limitations
Figure 17. Asymmetrical Design for US ADSL Modems
An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a 410 V off-state voltage, this may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary protector. The 270 V off-state voltage is likely to be lower than the primary switching voltage and there isn't coordination. Under GR-1089CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern 2.54 (.100)
2.40 (.095)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
2.16 (.085)
MDXX BID
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
TISP4070J1 TISP4080J1 TISP4095J1 TISP4115J1 TISP4125J1 TISP4145J1 TISP4165J1 TISP4180J1 TISP4200J1 TISP4219J1 TISP4250J1 TISP4290J1 TISP4350J1 TISP4395J1
Symbolization Code
4070J1 4080J1 4095J1 4115J1 4125J1 4145J1 4165J1 4180J1 4200J1 4219J1 4250J1 4290J1 4350J1 4395J1
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
SMB
Carrier
Embossed Tape Reel Pack
Standard Quantity
3 000
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
SMB (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB02 4.06 - 4.57 (.160 - .180)
3. 30 - 3. 94 (.130 - .155)
1
2
Index Mark (if needed)
2. 00 - 2.40 (.079 - .094)
0. 76 - 1.52 (.030 - .060) 5. 21 - 5.59 (.205 - .220)
MILLIMETERS (INCHES)
1. 90 - 2.10 (.075 - .083)
0. 10 - 0. 20 (.004 - .008)
1. 96 - 2. 32 (.077 - .091)
DIMENSIONS ARE:
MDXXBHG
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB02 Package Single-Sprocket Tape
3. 90 - 4.10 (.154 - .161 ) 1. 95 - 2.05 (.077 - .081)
o
1. 50 MIN . (.059) 1. 55 1.65 o (.061 - .065 ) 1. 65 - 1.85 (.065 - .073 ) 0. 40 MAX . (.016)
5. 45 - 5.55 (.215 - .219 ) 11.70 - 12.30 (.461 - .484 )
8. 20 MAX . (.323)
e
7. 90 - 8.10 (.311 - .319 ) Direction of Feed Carrier Tape Embossment
0 MIN . Cover Tape
4. 50 MAX . (.177)
20
Maximium component rotation
Typical component cavity center line Typical component center line
DIMENSIONS ARE:
MILLIMETERS (INCHES)
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 mm 3.0 mm (12.99 in .118 in) Reel hub diameter 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.512 in .020 in) C. 3 000 devices are on a reel.
MDXXBHH
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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